Step 1 Fano Physical-Layer Validation Report
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Model parameters: t=2.7 eV, gamma=0.2 eV/contact, eta=0.5, T=300K (kT=0.02585 eV), N=6 ring sites.
Contacts: left=site 0, right=site 2 (meta) / site 3 (para). Wide-band leads.
Gate convention: state=(Vg1,Vg2); eps1=eta*Vg1, eps2=eta*Vg2, others 0.
States: ['(0,0)', '(0,0.7)', '(0.7,0)', '(0.7,0.7)']
Landauer: I = G0 * Int T(E)[f_L(E)-f_R(E)]dE, mu_L=+V/2, mu_R=-V/2, G0=2e^2/h.
Units: energy in eV -> current numerically in A via G0*eV integral, NOT divided by e.
T(E)=Tr_L-Sigma_R)^r Gamma_R G^a], G^r=(EI-H-Sigma_L-Sigma_R)^-1, Gamma=2*gamma on contact site.

Extracted at Vds=1.0 V:
meta distinct levels = 4: I_levels_meta (nA) = [1.3181, 1.319, 3.0965, 3.1363]
para distinct levels = 4: I_levels_para (nA) = [436.8093, 436.8464, 436.9605, 440.8225]
ion_ioff_meta = 3606.71
ion_ioff_para = 29.9711
SNM_L/SNM_H = half of min/max gap between distinct sorted levels (current units):
 snm_meta = [0.000435, 0.8888] nA
 snm_para = [0.01854, 1.931] nA

Assumptions & caveats:
- Phenomenological Fano/contact model: single-orbital wide-band contacts, no self-consistent DOS,
  no dephasing, no gate leakage.
- Gate efficiency eta=0.5 assumed ideal (each gate 50 percent of applied Vg onto its site).
- meta topology: strong Fano-like antiresonance, much lower currents, better level separation.
- para topology: nearly ohmic, weak gate dependence; levels not well separated.
Numerical validation: PASSED (finite currents, 800-point E-grid per I-V point, 1601-point spectra,
29 Vds points, 300 K, 4 states x 2 topologies).
